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| CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPTH10 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise UHF/VHF amplifier and high output oscillator applications. MARKING CODE: C3E SOT-23 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE fT Ccb Crb rb'Cc SYMBOL VCBO VCEO VEBO PD TJ, Tstg JA otherwise noted) MIN 30 25 3.0 350 -65 to +150 357 UNITS V V V mW C C/W CHARACTERISTICS: (TA=25C unless TEST CONDITIONS VCB=25V VEB=2.0V IC=100A IC=1.0mA IE=10A IC=4.0mA, IB=0.4mA VCE=10V, IB=4.0mA VCE=10V, IC=4.0mA VCE=10V, IC=4.0mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IE=0, f=1.0MHz VCB=10V, IC=4.0mA, f=31.8MHz MAX 100 100 30 25 3.0 0.50 0.95 60 650 0.70 0.65 9.0 UNITS nA nA V V V V V MHz pF pF ps R5 (3-February 2010) CMPTH10 SURFACE MOUNT NPN SILICON RF TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: C3E R5 (3-February 2010) w w w. c e n t r a l s e m i . c o m |
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